This is an online, interactive lab that contains instructions, multimedia, and assessments where students can learn at their own pace. As an instructor, you can create and edit instances of this lab, assign them to students, and view student progress.
This is an online, interactive course that contains instructions, multimedia, and assessments where students can learn at their own pace. As an instructor, you can create and edit instances of this course, assign them to students, and view student progress.
by
Dr. Nicola Femia | University of Salerno, and Texas Instruments
The goal of this lab is to investigate the properties of a MOSFET in DC operation, when it works as a pass device in linear regulators. First, we review the equations describing the behavior of a MOSFET in DC operation, and discuss the impact of the gate-to-source voltage on the operating point. Next, we predict the MOSFET operating region and calculate the power losses and temperature under different conditions. Then, we simulate the MOSFET using its physical model. Finally, we perform lab experiments to estimate the real value of MOSFET parameters and compare their impact on the accuracy of theoretical and simulation predictions.
After completing this lab, students will be able to:
Given the parameters of a MOSFET, a source voltage and a load resistance, calculate the gate driver voltage required to achieve a desired output voltage. Students will determine the MOSFET operating region and calculate its drain-to-source voltage and current, power losses and junction temperature, with specified units and decimal digits, by applying the appropriate MOSFET equations.
Given the parameters of a MOSFET, a source voltage, and a load resistance, determine the gate driver voltage required to achieve a desired output voltage by simulating the MOSFET operation. Students will determine the MOSFET operating region and calculate its drain-to-source voltage and current, power losses and junction temperature, with specified units and decimal digits, and will determine the accuracy of theoretical predictions.
Given a real MOSFET, a DC power supply, a load resistor of given resistance, and a function generator, set experimentally the MOSFET gate driver voltage, allowing them to achieve a desired output voltage. Students will also record the measurement, with specified units and decimal digits, compare the measured values with the simulations, and determine the accuracy of simulations.
REQUIRED SKILLS
Basic proficiency using Multisim Live
Basic proficiency using ELVIS III Instruments
Basic proficiency in circuits and analog electronics
Requirements
NI ELVIS III
Engineering laboratory solution for project-based learning that combines instrumentation and embedded design with a web-driven experience, delivering a greater understanding of engineering fundamentals and system design.
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Multisim Live
Multisim Live is an online, touch-optimized component of Multisim, so students can design and simulate their circuits anywhere, anytime, on any device.
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TI Power Electronics Board for NI ELVIS III
Application board for NI ELVIS III which provides a hands-on approach to power electronics using functional blocks and TI circuits to understand each component in a power electronics system.
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